High‐Performance n‐Channel Printed Transistors on Biodegradable Substrate for Transient Electronics

Innovative methods to fabricate and integrate biodegradable high-grade electronics on green substrates are needed for the next generation of robust high-performance transient electronics. This is also alleviate growing problem electronic waste (e-waste). Herein, authors present n-channel silicon (Si) nanoribbons-based transistors developed metal (magnesium) foils using direct transfer printing method. The high effective mobility >600 cm2 V−1 s−1, on/off current ratio (Ion/off) >104, negligible hysteresis, transconductance 0.19 mS, an on-current 1.6 mA at a bias 2 V. Further, show stable device performance under temperature stress (5–50 °C), gate-bias stress, continuous long-term scans 24 h (>3000 cycles), aging test (up 100 days) demonstrating excellent potential futuristic devices circuits. Finally, effect transience electrical functioning Mg (at pH 8) degradation different values studied by hydrolysis. outcome from these experiments demonstrates as new avenue toward zero e-waste.